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Kim, Myungsoo
Nano Electronics and Technology Lab
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Zero-static power radio-frequency switches based on MoS2 atomristors

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Title
Zero-static power radio-frequency switches based on MoS2 atomristors
Author
Kim, MyungsooGe, RuijingWu, XiaohanLan, XingTice, JesseLee, Jack C.Akinwande, Deji
Issue Date
2018-06
Publisher
NATURE RESEARCH
Citation
NATURE COMMUNICATIONS, v.9, pp.2524
Abstract
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Omega are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f(c)), is about 10 THz for sub-mu m(2) switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.
URI
https://scholarworks.unist.ac.kr/handle/201301/53881
DOI
10.1038/s41467-018-04934-x
ISSN
2041-1723
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EE_Journal Papers
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