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Shin, Tae Joo
UNIST Synchrotron Radiation Research Laboratory
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  • Synchrotron Radiation Application Researches

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Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits

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dc.contributor.author Park, Hyunjin ko
dc.contributor.author Yoo, Sungmi ko
dc.contributor.author Ha, Jinha ko
dc.contributor.author Kim, Jinsoo ko
dc.contributor.author Mun, Hyun Jung ko
dc.contributor.author Shin, Tae Joo ko
dc.contributor.author Won, Jong Chan ko
dc.contributor.author Kim, Yun Ho ko
dc.date.available 2021-08-12T08:32:36Z -
dc.date.created 2021-08-09 ko
dc.date.issued 2021-07 ko
dc.identifier.citation ACS APPLIED MATERIALS & INTERFACES, v.13, no.26, pp.30921 - 30929 ko
dc.identifier.issn 1944-8244 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/53431 -
dc.description.abstract The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits. In this study, an efficient strategy to optimize the performance of flexible organic electronics, such as OFETs and complementary inverters, is proposed using a combination of polymer insulators tailored to each OSC type. Photopatternable soluble copolyimides (ScoPIs), which exhibit excellent insulating properties and chemical resistance, are synthesized and applied as gate dielectric layers in the OFETs. The material and electrical properties are systematically investigated by varying the molecular ratio of ScoPIs to determine the optimal conditions for each OFET type. As a result, complementary inverters report 1.67 times higher integration density compared to the conventional ones while maintaining gain, switching threshold, and static noise margin of 23.7 V/V, 22.1 V, and 12.1 V, respectively, at a supply voltage of 40 V. The flexible complementary inverters are successfully demonstrated by fully exploiting the advantages of ScoPIs. ko
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85108618005 ko
dc.identifier.wosid 000672492800065 ko
dc.type.rims ART ko
dc.identifier.doi 10.1021/acsami.1c06293 ko
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsami.1c06293 ko
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