Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits
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- Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits
- Park, Hyunjin; Yoo, Sungmi; Ha, Jinha; Kim, Jinsoo; Mun, Hyun Jung; Shin, Tae Joo; Won, Jong Chan; Kim, Yun Ho
- Issue Date
- AMER CHEMICAL SOC
- ACS APPLIED MATERIALS & INTERFACES, v.13, no.26, pp.30921 - 30929
- The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits. In this study, an efficient strategy to optimize the performance of flexible organic electronics, such as OFETs and complementary inverters, is proposed using a combination of polymer insulators tailored to each OSC type. Photopatternable soluble copolyimides (ScoPIs), which exhibit excellent insulating properties and chemical resistance, are synthesized and applied as gate dielectric layers in the OFETs. The material and electrical properties are systematically investigated by varying the molecular ratio of ScoPIs to determine the optimal conditions for each OFET type. As a result, complementary inverters report 1.67 times higher integration density compared to the conventional ones while maintaining gain, switching threshold, and static noise margin of 23.7 V/V, 22.1 V, and 12.1 V, respectively, at a supply voltage of 40 V. The flexible complementary inverters are successfully demonstrated by fully exploiting the advantages of ScoPIs.
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