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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 11379 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 11370 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Beom, Keonwon | - |
dc.contributor.author | Han, Jimin | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-21T15:39:28Z | - |
dc.date.available | 2023-12-21T15:39:28Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-07 | - |
dc.description.abstract | Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2-x) gate insulator and an indium-zinc oxide (IZO) channel layer for application to artificial synapses in neuromorphic systems. The drain current in these TFTs was reduced significantly by four orders of magnitude on application of a negative gate bias, then could be restored to its original value by applying a positive bias. The reduced drain current under negative biasing is interpreted as being caused by voltage-driven oxygen ion migration from the HfO2-x gate insulator to the IZO channel, which reduces the oxygen vacancy concentration in the IZO channel. In addition to emulating the analog-type potentiation and depression motions in artificial synapses, the tunable drain current presents paired-pulse facilitation and short-term and long-term plasticity behaviors. These wide-ranging and nonvolatile synaptic behaviors with tunable drain currents are indicative of the potential of the proposed TFTs for artificial synapse applications. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.13, no.26, pp.11370 - 11379 | - |
dc.identifier.doi | 10.1039/d1nr02911h | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-85109971400 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/53201 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2021/NR/D1NR02911H#!divAbstract | - |
dc.identifier.wosid | 000664565100001 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ANNEALING TEMPERATURE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | ELECTROLYTE | - |
dc.subject.keywordPlus | PLASTICITY | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TAOX | - |
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