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DC Field | Value | Language |
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dc.citation.number | 29 | - |
dc.citation.startPage | 2100503 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 31 | - |
dc.contributor.author | Zhang, Leining | - |
dc.contributor.author | Peng, Peng | - |
dc.contributor.author | Ding, Feng | - |
dc.date.accessioned | 2023-12-21T15:40:24Z | - |
dc.date.available | 2023-12-21T15:40:24Z | - |
dc.date.created | 2021-06-01 | - |
dc.date.issued | 2021-07 | - |
dc.description.abstract | Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals. | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.31, no.29, pp.2100503 | - |
dc.identifier.doi | 10.1002/adfm.202100503 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-85105008968 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/52956 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adfm.202100503 | - |
dc.identifier.wosid | 000646202500001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | high‐ | - |
dc.subject.keywordAuthor | index Cu surfaces | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL GRAPHENE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | FOILS | - |
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