A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm(2)/V.s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
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- A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm(2)/V.s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
- Kim, Gyoungsik; Kang, Seok-Ju; Dutta, Gitish K.; Han, Young-Kyu; Shin, Tae Joo; Noh, Yong-Young; Yang, Changduk
- Issue Date
- AMER CHEMICAL SOC
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.136, no.26, pp.9477 - 9483
- By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ∼10 cm2/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt- naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm 2/V·s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.
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