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DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 37 | - |
dc.contributor.author | Richardson, Christopher J. K. | - |
dc.contributor.author | Leavitt, Richard P. | - |
dc.contributor.author | Kim, Je-Hyung | - |
dc.contributor.author | Waks, Edo | - |
dc.contributor.author | Arslan, Ilke | - |
dc.contributor.author | Arey, Bruce | - |
dc.date.accessioned | 2023-12-21T19:39:48Z | - |
dc.date.available | 2023-12-21T19:39:48Z | - |
dc.date.created | 2021-04-13 | - |
dc.date.issued | 2019-01 | - |
dc.description.abstract | Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski-Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 mu m telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 mu m telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 mu m wavelength telecommunication systems. | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.37, no.1 | - |
dc.identifier.doi | 10.1116/1.5042540 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.scopusid | 2-s2.0-85059619456 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/52723 | - |
dc.identifier.wosid | 000456825600004 | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Origin of spectral brightness variations in InAs/InP quantum dot telecom single photon emitters | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | 2-PHOTON INTERFERENCE | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | BAND | - |
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