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정후영

Jeong, Hu Young
UCRF Electron Microscopy group
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dc.citation.number 13 -
dc.citation.startPage 2007186 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 33 -
dc.contributor.author Shin, Jung Ho -
dc.contributor.author Park, Jung Hwan -
dc.contributor.author Seo, Jeongmin -
dc.contributor.author Im, Tae Hong -
dc.contributor.author Kim, Jong Chan -
dc.contributor.author Lee, Han Eol -
dc.contributor.author Kim, Do Hyun -
dc.contributor.author Woo, Kie Young -
dc.contributor.author Jeong, Hu Young -
dc.contributor.author Cho, Yong-Hoon -
dc.contributor.author Kim, Taek-Soo -
dc.contributor.author Kang, Il-Suk -
dc.contributor.author Lee, Keon Jae -
dc.date.accessioned 2023-12-21T16:07:55Z -
dc.date.available 2023-12-21T16:07:55Z -
dc.date.created 2021-03-25 -
dc.date.issued 2021-04 -
dc.description.abstract A robust Cu conductor on a glass substrate for thin-film mu LEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu2O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m(-2), which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical mu LED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm(-2). The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 x 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.33, no.13, pp.2007186 -
dc.identifier.doi 10.1002/adma.202007186 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-85101618020 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/52561 -
dc.identifier.url https://onlinelibrary.wiley.com/doi/10.1002/adma.202007186 -
dc.identifier.wosid 000621784900001 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title A Flash-Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin-Film mu LEDs -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Cu electrodes -
dc.subject.keywordAuthor glass -
dc.subject.keywordAuthor interface chemistry -
dc.subject.keywordAuthor physical interlocking -
dc.subject.keywordAuthor thin‐ -
dc.subject.keywordAuthor film μ -
dc.subject.keywordAuthor LEDs -

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