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DC Field | Value | Language |
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dc.citation.endPage | 5283 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 5276 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 15 | - |
dc.contributor.author | Namgung, Seon | - |
dc.contributor.author | Koester, Steven J. | - |
dc.contributor.author | Oh, Sang-Hyun | - |
dc.date.accessioned | 2023-12-21T16:10:47Z | - |
dc.date.available | 2023-12-21T16:10:47Z | - |
dc.date.created | 2021-03-29 | - |
dc.date.issued | 2021-03 | - |
dc.description.abstract | Two-dimensional (2D) materials are promising candidates for building ultrashort-channel devices because their thickness can be reduced down to a single atomic layer. Here, we demonstrate an ultraflat nanogap platform based on atomic layer deposition (ALD) and utilize the structure to fabricate 2D material-based optical and electronic devices. In our method, ultraflat metal surfaces, template-stripped from a Si wafer mold, are separated by an Al2O3 ALD layer down to a gap width of 10 nm. Surfaces of both electrodes are vertically aligned without a height difference, and each electrode is ultraflat with a measured root-mean-square roughness as low as 0.315 nm, smaller than the thickness of monolayer graphene. Simply by placing 2D material flakes on top of the platform, short-channel field-effect transistors based on black phosphorus and MoS2 are fabricated, exhibiting their typical transistor characteristics. Furthermore, we use the same platform to demonstrate photodetectors with a nanoscale photosensitive channel, exhibiting higher photosensitivity compared to microscale gap channels. Our wafer-scale atomic layer lithography method can benefit a diverse range of 2D optical and electronic applications. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.15, no.3, pp.5276 - 5283 | - |
dc.identifier.doi | 10.1021/acsnano.0c10759 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-85103376639 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/52535 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsnano.0c10759 | - |
dc.identifier.wosid | 000634569100135 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | atomic layer lithography | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | template stripping | - |
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