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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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DC Field Value Language
dc.citation.conferencePlace JA -
dc.citation.conferencePlace Kyoto; Japan -
dc.citation.endPage 43 -
dc.citation.startPage 42 -
dc.citation.title IEEE Silicon Nanoelectronics Workshop -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Kim, D.-H -
dc.contributor.author Lee, J.-D. -
dc.contributor.author Park,B.-G. -
dc.date.accessioned 2023-12-20T06:35:58Z -
dc.date.available 2023-12-20T06:35:58Z -
dc.date.created 2014-12-23 -
dc.date.issued 2001-06-10 -
dc.identifier.bibliographicCitation IEEE Silicon Nanoelectronics Workshop, pp.42 - 43 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/52284 -
dc.publisher IEEE -
dc.title Single Electron Transistors Based on Silicon-On-Insulator Wire Patterened by Sidewall Masking Technology and Electrically Induced Tunnel Barriers -
dc.type Conference Paper -
dc.date.conferenceDate 2001-06-10 -

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