Growth of InN and InGaN quantum dots on GaN by low-pressure metalorganic chemical vapor deposition

Abstract

The Fifth International Conference on Nitride Semiconductors (ICNS-5) was held at Nara-Ken New Public Hall in Nara, Japan, 25–30 May 2003. This conference series focuses on recent advances in GaN and related materials. It covers scientific and technological developments associated with these materials, their processing and devices.

The objective of this conference was to provide a forum for active nitride researchers to exchange their knowledge by presenting their latest results and by carrying out in-depth technical discussions. This conference followed the tradition of the four previous conferences and focused on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents.