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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | South Korea | - |
| dc.citation.title | 제 25회 한국진공학회 | - |
| dc.contributor.author | Kwon, Soon-Yong | - |
| dc.date.accessioned | 2023-12-20T06:06:38Z | - |
| dc.date.available | 2023-12-20T06:06:38Z | - |
| dc.date.created | 2014-12-23 | - |
| dc.date.issued | 2003-08-01 | - |
| dc.identifier.bibliographicCitation | 제 25회 한국진공학회 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/52191 | - |
| dc.publisher | 한국진공학회 | - |
| dc.title | Growth of high quality In-rich InGaN/GaN quantum well structures using growth interruption | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2003-08-01 | - |
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