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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Possibility and design of resonant terahertz emitters based on nanoscale strained silicon plasma wave transistors with enhanced mobility

DC Field Value Language
dc.contributor.author Park, Jong Yul ko
dc.contributor.author Kim, Sung-Ho ko
dc.contributor.author Choi, Yang-Kyu ko
dc.contributor.author Hong, Songcheol ko
dc.contributor.author Lee, Sang-Gug ko
dc.contributor.author Kim, Kyung Rok ko
dc.date.available 2014-07-14T01:58:51Z -
dc.date.created 2014-07-14 ko
dc.date.issued 2014-06 ko
dc.identifier.citation JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.6, pp.06JE08-1 - 06JE08-5 ko
dc.identifier.issn 0021-4922 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/5203 -
dc.description.abstract In this paper, we report the possibility of silicon (Si) plasma wave transistor (PWT) as a resonant terahertz (THz) emitter based on the theoretical analysis focusing on the strained Si with enhanced mobility. Under asymmetric boundary conditions for plasma wave instability, the amplitude of plasma wave in FET channel increases and this plasma wave increment provides the basis of the electromagnetic (EM) wave emission from FET. Because this instability is controlled by manipulation of plasma wave velocity (s) and electron drift velocity (v0), we propose the design window based on s-v0 plot which determines whether the device operates as the resonant THz emitters considering all the required physical conditions. It is expected from the proposed design window that strained Si PWT down to 10nm gate length with enhanced channel mobility of 500cm2·V -1·-1 can operate as a resonant emitter in THz frequency range. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher JAPAN SOC APPLIED PHYSICS ko
dc.title Possibility and design of resonant terahertz emitters based on nanoscale strained silicon plasma wave transistors with enhanced mobility ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84903287423 ko
dc.identifier.wosid 000338439500027 ko
dc.type.rims ART ko
dc.description.wostc 1 *
dc.description.scopustc 0 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-07-14 *
dc.identifier.doi 10.7567/JJAP.53.06JE08 ko
dc.identifier.url http://iopscience.iop.org/article/10.7567/JJAP.53.06JE08/meta ko
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