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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | UK | - |
| dc.citation.conferencePlace | Birmingham | - |
| dc.citation.title | 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 | - |
| dc.contributor.author | Yoo, E.J. | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Choi, Y.J. | - |
| dc.contributor.author | Kang, C.J. | - |
| dc.date.accessioned | 2023-12-20T02:06:04Z | - |
| dc.date.available | 2023-12-20T02:06:04Z | - |
| dc.date.created | 2021-03-15 | - |
| dc.date.issued | 2012-08-20 | - |
| dc.description.abstract | Current-voltage (I-V) characteristics of the Cr/ZnO/Cr capacitor structure was investigated. A bipolar resistive switching behavior was observed in the patterned structure of Cr/ZnO/Cr. In addition, using Cr coated AFM tip as a top electrode, the electrical characteristics of local area of ZnO/Cr structure was measured and compared with that of capacitor structure. © 2012 IEEE. | - |
| dc.identifier.bibliographicCitation | 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 | - |
| dc.identifier.doi | 10.1109/NANO.2012.6322094 | - |
| dc.identifier.issn | 1944-9399 | - |
| dc.identifier.scopusid | 2-s2.0-84869193504 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50648 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Resistive switching characteristics of patterned Cr/ZnO/Cr thin film structure | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2012-08-20 | - |
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