There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | C159 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | C155 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Hwang, ES | - |
dc.contributor.author | Kim, BM | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Sun, HJ | - |
dc.contributor.author | Hong, TE | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Sohn, H | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-22T10:13:57Z | - |
dc.date.available | 2023-12-22T10:13:57Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2005-08 | - |
dc.description.abstract | The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300 degrees C were investigated. The results show that the B2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 mu m and top diameter: 0.14 mu m) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated. (c) 2005 The Electrochemical Society. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.10, pp.C155 - C159 | - |
dc.identifier.doi | 10.1149/1.2035703 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-25644441800 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50302 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2035703 | - |
dc.identifier.wosid | 000231390900028 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TUNGSTEN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | DIBORANE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI(100) | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.