File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.endPage 199 -
dc.citation.number 1-2 -
dc.citation.startPage 195 -
dc.citation.title THIN SOLID FILMS -
dc.citation.volume 508 -
dc.contributor.author Zhao, Z. M. -
dc.contributor.author Yoon, Tae-Sik -
dc.contributor.author Feng, W. -
dc.contributor.author Li, B. Y. -
dc.contributor.author Kim, J. H. -
dc.contributor.author Liu, J. -
dc.contributor.author Hulko, O. -
dc.contributor.author Xie, Y. H. -
dc.contributor.author Kim, H. M. -
dc.contributor.author Kim, K. B. -
dc.contributor.author Kim, H. J. -
dc.contributor.author Wang, K. L. -
dc.contributor.author Ratsch, C. -
dc.contributor.author Caflisch, R. -
dc.contributor.author Ryu, D. Y. -
dc.contributor.author Russell, T. P. -
dc.date.accessioned 2023-12-22T10:06:07Z -
dc.date.available 2023-12-22T10:06:07Z -
dc.date.created 2021-03-06 -
dc.date.issued 2006-06 -
dc.description.abstract The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood. (c) 2005 Elsevier B.V. All rights reserved. -
dc.identifier.bibliographicCitation THIN SOLID FILMS, v.508, no.1-2, pp.195 - 199 -
dc.identifier.doi 10.1016/j.tsf.2005.08.407 -
dc.identifier.issn 0040-6090 -
dc.identifier.scopusid 2-s2.0-33748662873 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50299 -
dc.identifier.wosid 000237460100049 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE SA -
dc.title The challenges in guided self-assembly of Ge and InAs quantum dots on Si -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Materials Science; Physics -
dc.type.docType Article; Proceedings Paper -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Ge -
dc.subject.keywordAuthor InAs -
dc.subject.keywordAuthor quantum dots -
dc.subject.keywordAuthor self-assembly -
dc.subject.keywordPlus SI(001) -
dc.subject.keywordPlus ISLANDS -
dc.subject.keywordPlus SURFACE -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus ARRAYS -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.