JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.16, no.5, pp.848 - 851
Abstract
Capacitance-voltage hysteresis for a non-volatile memory was realized in a metal-pentacene-insulator-silicon (MPIS) device using gold (Au) nanoparticles (NPs) intervened between pentacene and SiO2 insulator. A memory window higher than 2.0 V was obtained under (+/-) 5 V programming sweeping range. The SiO2 as thick as 30 nm was adopted as the dielectric layer, and 3-aminopropyl-triethoxysilane (APTES) was used for self-assembling of Au NPs monolayer. In addition, citrate-functionalized Au NPs was dip-coated and used as charge storage elements. Formation of a monolayer of the Au NPs was confirmed by HR-SEM and AFM. Capacitance-voltage hysteresis in this study was resulted from the charge storage in the layer of Au NPs. (C) 2010 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.