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DC Field | Value | Language |
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dc.citation.endPage | H369 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | H366 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Hu, Quanli | - |
dc.contributor.author | Eom, Tae-Kwang | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Hyung-Jun | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Kim, Yong-Sang | - |
dc.contributor.author | Ryu, Du Yeol | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-22T06:39:49Z | - |
dc.date.available | 2023-12-22T06:39:49Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2010-11 | - |
dc.description.abstract | The formation of a vertically and laterally self-aligned double layer of CdSe colloidal nanocrystals (NCs) in a nanopatterned dielectric layer on Si substrate was demonstrated by a repeating dip-coating process for NC deposition and atomic layer deposition (ALD) of Al(2)O(3) layer. A nanopatterned SiO(2)/Si substrate was formed by patterning with a self-assembled diblock copolymer. After the selective deposition of the first NC layer inside the SiO(2) nanopattern by dip-coating, an Al(2)O(3) interdielectric layer and the second NC layer in the Al(2)O(3) nanopattern were sequentially deposited. The capacitance voltage measurement of an Al-gate/ALD-Al(2)O(3)(25 nm)/seconcl-CdSe-NCs/ALD-Al(2)O(3)(2 nm)/first-CdSe-NCs/nanopattemed-SiO(2)(15 nm)/p-Si substrate structure showed the flatband voltage shift through the charge transport between the gate and NCs. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3479548] All rights reserved. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.11, pp.H366 - H369 | - |
dc.identifier.doi | 10.1149/1.3479548 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-77956606409 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50277 | - |
dc.identifier.wosid | 000283193300024 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | COLLOIDAL NANOCRYSTALS | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
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