Effects on Annealing Temperature for Solution-Processed IZTO TFTs by Nitrogen Incorporation

Abstract

The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by NH(4)OH addition into a precursor solution of zinc, indium, and tin chlorides. At 600 degrees C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm(2)/V s with an on/off ratio of 2.05 X 10(7). By the nitrogen incorporation, the annealing temperature could be lowered to 400 degrees C for the fabrication of TFTs having a field-effect mobility of 0.303 cm(2)/V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489530] All rights reserved.