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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 6048 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 6044 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Kim, Yo-Han | - |
dc.contributor.author | Jung, Sung Mok | - |
dc.contributor.author | Hu, Quanli | - |
dc.contributor.author | Kim, Yong-Sang | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.date.accessioned | 2023-12-22T06:07:29Z | - |
dc.date.available | 2023-12-22T06:07:29Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2011-07 | - |
dc.description.abstract | In this study, it is demonstrated that an organic memory structure using pentacene and citrate-stabilized silver nanoparticles (Ag NPs) as charge storage elements on dielectric SiO2 layer and silicon substrate. The Ag NPs were synthesized by thermal reduction method of silver trifluoroacetate with oleic acid. The synthesized Ag NPs were analyzed with high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) for their crystalline structure. The capacitance versus voltage (C-V) curves obtained for the Ag NPs embedded capacitor exhibited flat-band voltage shifts, which demonstrated the presence of charge storages. The citrate-capping of the Ag NPs was confirmed by ultraviolet-visible (UV-VIS) and Fourier transformed infrared (FTIR) spectroscopy. With voltage sweeping of +/-7 V, a hysteresis loop having flatband voltage shift of 7.1 V was obtained. The hysteresis loop showed a counter-clockwise direction. In addition, electrical performance test for charge storage showed more than 10,000 second charge retention time. The device with Ag NPs can be applied to an organic memory device for flexible electronics. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6044 - 6048 | - |
dc.identifier.doi | 10.1166/jnn.2011.4370 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-84863042292 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50270 | - |
dc.identifier.wosid | 000293663200080 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Organic Memory Capacitor Device Fabricated with Ag Nanoparticles | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Organic Memory Capacitor | - |
dc.subject.keywordAuthor | Ag Nanoparticles | - |
dc.subject.keywordPlus | SEMICONDUCTOR STRUCTURE | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
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