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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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dc.citation.endPage 6048 -
dc.citation.number 7 -
dc.citation.startPage 6044 -
dc.citation.title JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY -
dc.citation.volume 11 -
dc.contributor.author Kim, Yo-Han -
dc.contributor.author Jung, Sung Mok -
dc.contributor.author Hu, Quanli -
dc.contributor.author Kim, Yong-Sang -
dc.contributor.author Yoon, Tae-Sik -
dc.contributor.author Lee, Hyun Ho -
dc.date.accessioned 2023-12-22T06:07:29Z -
dc.date.available 2023-12-22T06:07:29Z -
dc.date.created 2021-03-06 -
dc.date.issued 2011-07 -
dc.description.abstract In this study, it is demonstrated that an organic memory structure using pentacene and citrate-stabilized silver nanoparticles (Ag NPs) as charge storage elements on dielectric SiO2 layer and silicon substrate. The Ag NPs were synthesized by thermal reduction method of silver trifluoroacetate with oleic acid. The synthesized Ag NPs were analyzed with high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) for their crystalline structure. The capacitance versus voltage (C-V) curves obtained for the Ag NPs embedded capacitor exhibited flat-band voltage shifts, which demonstrated the presence of charge storages. The citrate-capping of the Ag NPs was confirmed by ultraviolet-visible (UV-VIS) and Fourier transformed infrared (FTIR) spectroscopy. With voltage sweeping of +/-7 V, a hysteresis loop having flatband voltage shift of 7.1 V was obtained. The hysteresis loop showed a counter-clockwise direction. In addition, electrical performance test for charge storage showed more than 10,000 second charge retention time. The device with Ag NPs can be applied to an organic memory device for flexible electronics. -
dc.identifier.bibliographicCitation JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6044 - 6048 -
dc.identifier.doi 10.1166/jnn.2011.4370 -
dc.identifier.issn 1533-4880 -
dc.identifier.scopusid 2-s2.0-84863042292 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50270 -
dc.identifier.wosid 000293663200080 -
dc.language 영어 -
dc.publisher AMER SCIENTIFIC PUBLISHERS -
dc.title Organic Memory Capacitor Device Fabricated with Ag Nanoparticles -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Organic Memory Capacitor -
dc.subject.keywordAuthor Ag Nanoparticles -
dc.subject.keywordPlus SEMICONDUCTOR STRUCTURE -
dc.subject.keywordPlus NANOCRYSTALS -

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