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DC Field | Value | Language |
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dc.citation.endPage | 6143 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 6140 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.contributor.author | Kim, Hyung-Jun | - |
dc.contributor.author | Jung, Sung Mok | - |
dc.contributor.author | Kim, Yo-Han | - |
dc.contributor.author | Kim, Bong-Jin | - |
dc.contributor.author | Ha, Sanghyub | - |
dc.contributor.author | Kim, Yong-Sang | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.date.accessioned | 2023-12-22T06:07:27Z | - |
dc.date.available | 2023-12-22T06:07:27Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2011-07 | - |
dc.description.abstract | We report on the electrical behavior of gold nanoparticles (Au NPs) intervened metal-pentacene-insulator-semiconductor structures. The structure adopts polyvinyl alcohol (PVA) and pentacene as gate insulator and semiconductor, respectively. On the PVA (250 nm) film which was spin-coated and UV cross-linked, 3-aminopropyl triethoxysilane was functionalized for self assembling of the Au NPs monolayer. The devices exhibited clockwise hysteresis in their capacitance-voltage characteristics, with a memory window depending on the range of the voltage sweep. A relatively large memory window of about 4.7 V. which was deduced from control devices, was achieved with voltage sweep of (-/+)7 V. Formation of the monolayered Au NPs was confirmed by field effect scanning electron microscopy and atomic force microscopy. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.18, pp.6140 - 6143 | - |
dc.identifier.doi | 10.1016/j.tsf.2011.03.112 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.scopusid | 2-s2.0-79958099221 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50267 | - |
dc.identifier.wosid | 000292576500053 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Characterization of gold nanoparticle pentacene memory device with polymer dielectric layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gold nanoparticle | - |
dc.subject.keywordAuthor | Capacitance-voltage | - |
dc.subject.keywordAuthor | Metal-pentacene-insulator-semiconductor | - |
dc.subject.keywordAuthor | Polyvinyl alcohol | - |
dc.subject.keywordPlus | FIELD EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | METALLIC NANOPARTICLES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | AL2O3 | - |
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