The gamma-Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning

Abstract

The memristor ratioed logic (MRL)-based NAND operation is demonstrated using a combination of two Ag/gamma-Fe2O3 nanoparticles assembly/Pt memristors in series with one CMOS inverter. This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning resistance is a promising technique for use in improving the operational frequency of the MRL operation. MRL-based NAND logic demonstrated in this letter manifests itself as a potential candidate for memristor-based logic compatible with CMOS digital/analog circuitry.