Resistive Switching Characteristics of Ta2O5 Thin Film and Maghemite Nanoparticles Assembly Hybrid Device

Abstract

The fabrication of a hybrid structure with a gamma-Fe2O3 nanoparticle assembly and a Ta2O5 thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta2O5 thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/gamma-Fe2O3/Ta2O5/Pt on the SiO2/Si substrate. The SET voltage (V-SET) was observed at similar to+1.6 V, and the RESET voltage (V-RESET), at similar to-1 V, which are smaller compared to those of the Ti/Ta2O5/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices. The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the gamma-Fe2O3 nanoparticle assembly at the interface of Ti/Ta2O5 rejuvenated the switching characteristics of the hybrid device.