There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 9 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 114 | - |
dc.contributor.author | Abbas, Haider | - |
dc.contributor.author | Ali, Asif | - |
dc.contributor.author | Jung, Jongwan | - |
dc.contributor.author | Hu, Quanli | - |
dc.contributor.author | Park, Mi Ra | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Kang, Chi Jung | - |
dc.date.accessioned | 2023-12-21T19:17:37Z | - |
dc.date.available | 2023-12-21T19:17:37Z | - |
dc.date.created | 2021-02-25 | - |
dc.date.issued | 2019-03 | - |
dc.description.abstract | A controllable and reversible transition of volatile and non-volatile resistive switching is presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer resistive memory devices. The coexistence of volatile and non-volatile switching characteristics was demonstrated by controlling the current compliance during the SET process. With lower current compliance (<50 mu A), the formation of an unstable conducting filament presented typical diode-like non-volatile switching. A reversible transition from volatile to non-volatile switching could be obtained by applying a higher current compliance (>= 50 mu A). Moreover, highly uniform multistate memory characteristics were achieved by modulating the current compliance in the non-volatile switching region. The coexistence of volatile and multistate non-volatile resistive switching behaviors with a reversible transition demonstrates the capability of developing a selector element for crossbar arrays and the application for next generation multistate high-density storage with the same Ag/IGZO/MnO/Pt device. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.114, no.9 | - |
dc.identifier.doi | 10.1063/1.5082901 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-85062633078 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50197 | - |
dc.identifier.wosid | 000460820600046 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TANTALUM OXIDE | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.