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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 6 | - |
| dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
| dc.citation.volume | 34 | - |
| dc.contributor.author | Baek, Hani | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Sun, Gwang Min | - |
| dc.contributor.author | Shin, Chansun | - |
| dc.date.accessioned | 2023-12-21T19:06:49Z | - |
| dc.date.available | 2023-12-21T19:06:49Z | - |
| dc.date.created | 2021-02-25 | - |
| dc.date.issued | 2019-06 | - |
| dc.description.abstract | We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device. The threshold voltage and breakdown voltage decreased after irradiation, whereas the collector leakage current increased. Turn-on and turn-off switching times decreased and increased, respectively, with the irradiation dose. The irradiation-induced changes in the electrical characteristics can be attributed to the buildup of the positive oxide-trapped charges in the gate oxide by gamma irradiation. The evaluated characteristics data were compared with the data for gamma-irradiated planar-gate IGBTs reported in the literature. It was found that a significant degradation occurred in the shift of the threshold voltage and switching times for trench-gate IGBTs. | - |
| dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.6 | - |
| dc.identifier.doi | 10.1088/1361-6641/ab157d | - |
| dc.identifier.issn | 0268-1242 | - |
| dc.identifier.scopusid | 2-s2.0-85068447637 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50194 | - |
| dc.identifier.wosid | 000468637400015 | - |
| dc.language | 영어 | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter | - |
| dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | insulated gate bipolar transistor | - |
| dc.subject.keywordAuthor | gamma irradiation | - |
| dc.subject.keywordAuthor | total dose effects | - |
| dc.subject.keywordAuthor | trench gate IGBT | - |
| dc.subject.keywordPlus | RADIATION | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | IGBT | - |
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