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DC Field | Value | Language |
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dc.citation.endPage | 1161 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1154 | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 2 | - |
dc.contributor.author | Lee, Tae Sung | - |
dc.contributor.author | Lee, Nam Joo | - |
dc.contributor.author | Abbas, Haider | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Kang, Chi Jung | - |
dc.date.accessioned | 2023-12-21T17:40:36Z | - |
dc.date.available | 2023-12-21T17:40:36Z | - |
dc.date.created | 2021-02-23 | - |
dc.date.issued | 2020-04 | - |
dc.description.abstract | Memristive switching with digital set and multistep analog reset characteristics were demonstrated in tantalum oxide (Ta2O5)-based resistive random access memory (RRAM) devices using Ti and Ag top electrodes (TEs). The Ta2O5-based device with a Ti TE requires a forming process to initiate the switching and exhibits a gradual resistance increase behavior with the sequential increase in voltage in the reset process. The Ta2O5-based device with a Ag TE shows a slightly different switching behavior. The Ta2O5-based device with a Ag TE does not require a forming process and shows a gradual resistance increase behavior after an abrupt reset with a sequential increase in voltage in the reset process. The difference in switching behavior is because of the difference in the composition of the conducting filament in both devices. The Ta2O5-based device with a Ag TE presents a dual-mode switching mechanism with coexistence of Ag and oxygen vacancy-driven filament formation. The configuration of the conducting filament is controlled by the compliance current (I-cc). The resistive switching occurs because of oxygen vacancy filaments at low I-cc, whereas it is due to dual filaments consisting of Ag and oxygen vacancies at high I-cc. This is confirmed by the analyses of the temperature dependence of the conducting filament and the conduction mechanism. These results with unique dual-mode switching behaviors will help identify the conducting filament mechanisms and overcome the technical limitations faced by the RRAM devices. | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.2, no.4, pp.1154 - 1161 | - |
dc.identifier.doi | 10.1021/acsaelm.0c00128 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.scopusid | 2-s2.0-85089985911 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50186 | - |
dc.identifier.wosid | 000529879600036 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Engineering; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | memristor | - |
dc.subject.keywordAuthor | compliance control | - |
dc.subject.keywordAuthor | dual-mode switching | - |
dc.subject.keywordAuthor | Ta2O5 | - |
dc.subject.keywordAuthor | top electrode effect | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY DEVICE | - |
dc.subject.keywordPlus | MEMRISTIVE DEVICES | - |
dc.subject.keywordPlus | CONTACTS | - |
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