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DC Field | Value | Language |
---|---|---|
dc.citation.number | 7 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Lee, Hyerin | - |
dc.contributor.author | Beom, Keonwon | - |
dc.contributor.author | Kim, Minju | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-21T17:13:05Z | - |
dc.date.available | 2023-12-21T17:13:05Z | - |
dc.date.created | 2021-02-23 | - |
dc.date.issued | 2020-07 | - |
dc.description.abstract | Electrical properties of an oxide semiconductor thin-film transistor (TFT) with a ZnO channel layer and a HfOx gate insulator, both of which are deposited by atomic layer deposition (ALD), are investigated at varying post-annealing temperatures. The TFTs that are post-annealed at 250 and 300 degrees C show relative low on/off ratios < 10(2). They also have a counter-clockwise hysteresis in the transfer curves with slightly reduced threshold voltage upon repeatedly applying a positive gate voltage. However, the transfer curves of the devices post-annealed at 350 degrees C exhibit the increased on/off ratios > 10(2)and clockwise hysteresis with a little increased threshold voltage due to electron charging at the trap states in the HfOx/ZnO interface or inside the HfOx gate insulator. The threshold voltage shift, however, is negligible at the gate voltage of +20 V and as low as about 2.2 V at the highest gate voltage of +40 V, which guarantees stable operations of TFTs without significant degradation of electrical performance. The channel mobilities are around 4.0 cm(2)V(-1)s(-1)at this annealing temperature range. The presented results report the dependence of electrical performance such as on/off ratio and electrical instability, possibly caused by electrical charging, on the post-annealing temperature, which requires post-annealing at 350 degrees C or higher temperatures for stable operations of TFTs with ALD-ZnO and HfOx. | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.7 | - |
dc.identifier.doi | 10.1088/1361-6641/ab883f | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.scopusid | 2-s2.0-85087168020 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50182 | - |
dc.identifier.wosid | 000545037400001 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Post-annealing temperature-dependent electrical properties of thin-film transistors with a ZnO channel and HfOx gate insulator deposited by atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | zinc oxide | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | post-annealing | - |
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