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DC Field | Value | Language |
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dc.citation.endPage | 3046 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 3038 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 15 | - |
dc.contributor.author | Kim, Minseong | - |
dc.contributor.author | Seo, Jihyung | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Moon, Jong Sung | - |
dc.contributor.author | Lee, Junghyun | - |
dc.contributor.author | Kim, Je-Hyung | - |
dc.contributor.author | Kang, Joohoon | - |
dc.contributor.author | Park, Hyesung | - |
dc.date.accessioned | 2023-12-21T16:16:09Z | - |
dc.date.available | 2023-12-21T16:16:09Z | - |
dc.date.created | 2021-03-07 | - |
dc.date.issued | 2021-02 | - |
dc.description.abstract | Chemical vapor deposition (CVD) using liquid-phase precursors has emerged as a viable technique for synthesizing uniform large-area transition metal dichalcogenide (TMD) thin films. However, the liquid-phase precursor-assisted growth process typically suffers from small-sized grains and unreacted transition metal precursor remainders, resulting in lower-quality TMDs. Moreover, synthesizing large-area TMD films with a monolayer thickness is also quite challenging. Herein, we successfully synthesized high-quality large-area monolayer molybdenum diselenide (MoSe2) with good uniformity via promoter-assisted liquid-phase CVD process using the transition metal-containing precursor homogeneously modified with an alkali metal halide. The formation of a reactive transition metal oxyhalide and reduction of the energy barrier of chalcogenization by the alkali metal promoted the growth rate of the TMDs along the in-plane direction, enabling the full coverage of the monolayer MoSe2 film with negligible few-layer regions. Note that the fully selenized monolayer MoSe2 with high crystallinity exhibited superior electrical transport characteristics compared with those reported in previous works using liquid-phase precursors. We further synthesized various other monolayer TMD films, including molybdenum disulfide, tungsten disulfide, and tungsten diselenide, to demonstrate the broad applicability of the proposed approach. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.15, no.2, pp.3038 - 3046 | - |
dc.identifier.doi | 10.1021/acsnano.0c09430 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-85100662104 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50095 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsnano.0c09430 | - |
dc.identifier.wosid | 000623061800088 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Crystalline Monolayer Transition Metal Dichalcogenides Films for Wafer-Scale Electronics | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | alkali metal halide | - |
dc.subject.keywordAuthor | high crystallinity | - |
dc.subject.keywordAuthor | large-area | - |
dc.subject.keywordAuthor | liquid-phase precursor | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
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