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DC Field | Value | Language |
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dc.citation.endPage | 2020 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2015 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 50 | - |
dc.contributor.author | Shin, Se-Un | - |
dc.contributor.author | Ryu, Sang Ouk | - |
dc.date.accessioned | 2023-12-21T16:08:09Z | - |
dc.date.available | 2023-12-21T16:08:09Z | - |
dc.date.created | 2021-02-18 | - |
dc.date.issued | 2021-04 | - |
dc.description.abstract | Encapsulation of organic light-emitting diodes (OLEDs) is the only way to prevent degradation due to the penetration of moisture and oxygen. However, the upper encapsulation layer, located in the path through which light from the OLED passes, adversely affects light transmission. In this study, we calculated the optical transmittance by using admittance trajectory simulation and compared the data with actual Al2O3/TiO2 multilayer film processed by atomic layer deposition (ALD). By applying the simulated data on to actual encapsulation layer, we can observe the optical transmittance increase of up to 8% compared to the film of Al2O3/TiO2/Al2O3 structure. Over 90% of optical transmittance was achieved for all the visible wavelength ranges while maintaining water vapor transmission rate (WVTR) of the processed multilayer thin film as low as of 5 × 10−5 g/m2/day, which was measured using MOCON Aquatran 2. | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.50, no.4, pp.2015 - 2020 | - |
dc.identifier.doi | 10.1007/s11664-020-08731-5 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.scopusid | 2-s2.0-85100206394 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/49990 | - |
dc.identifier.url | https://www.springerprofessional.de/en/optical-transmittance-improvements-of-al2o3-tio2-multilayer-oled/18772674 | - |
dc.identifier.wosid | 000607981800004 | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Optical Transmittance Improvements of Al2O3/TiO2 Multilayer OLED Encapsulation Films Processed by Atomic Layer Deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Optical transmittance | - |
dc.subject.keywordAuthor | OLED encapsulation | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | multilayer | - |
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