There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 6126 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 6119 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Jeon, Jaeho | - |
dc.contributor.author | Kim, Mm Je | - |
dc.contributor.author | Shin, Gicheol | - |
dc.contributor.author | Lee, Myeongjae | - |
dc.contributor.author | Kim, Young Jae | - |
dc.contributor.author | Kim, BongSoo | - |
dc.contributor.author | Lee, Yoonmyung | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.date.accessioned | 2023-12-21T18:07:00Z | - |
dc.date.available | 2023-12-21T18:07:00Z | - |
dc.date.created | 2020-03-02 | - |
dc.date.issued | 2020-02 | - |
dc.description.abstract | Negative differential resistance/transconductance (NDR/NDT) has been attracting significant attention as a key functionality in the development of multivalued logic (MVL) systems that can overcome the limits of conventional binary logic devices. A high peak-to-valley current ratio (PVCR) and more than double-peak transfer characteristics are required to achieve a stable MVL operation. In this study, an organic NDR (ONDR) device with double-peak transfer characteristics and a high peak-to-valley current ratio (PVCR; >10(2)) is fabricated by utilizing an organic material platform for the development of a key element device for MVL applications. The organic NDT (ONDT) device is fabricated using a series connection of electron-dominant (P(NDI2OD-Se2)) and hole-dominant (P(DPP2DT-T2)) channel ambipolar organic field-effect transistors (AOFETs), and the NDR feature is achieved via correlated biasing of the ONDT device. The PVCR of the ONDT device can reach up to 13,000 via carrier transfer modulation of the AOFETs by varying the PMMA:P(VDF-TrFE) ratio of the mixed layer that is used as the top-gate dielectric of each AOFET. Further, ternary latch circuit operation is demonstrated using the developed ONDR device that stores three logic states with three distinct and controllable output states by adjusting the PMMA:P(VDF-TrFE) ratio of the dielectric layer. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.5, pp.6119 - 6126 | - |
dc.identifier.doi | 10.1021/acsami.9b18772 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85078942991 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/49536 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.9b18772 | - |
dc.identifier.wosid | 000512216900096 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Functionalized Organic Material Platform for Realization of Ternary Logic Circuit | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | organic electronics | - |
dc.subject.keywordAuthor | negative differential resistance | - |
dc.subject.keywordAuthor | negative differential transconductance | - |
dc.subject.keywordAuthor | peak-to-valley current ratio | - |
dc.subject.keywordAuthor | multivalued logic | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.