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DC Field | Value | Language |
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dc.citation.number | 4 | - |
dc.citation.startPage | 04EJ05 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.contributor.author | Ryu, Min Woo | - |
dc.contributor.author | Lee, Jeong Seop | - |
dc.contributor.author | Park, Kibog | - |
dc.contributor.author | Park, Wook-Ki | - |
dc.contributor.author | Han, Seong-Tae | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T02:42:24Z | - |
dc.date.available | 2023-12-22T02:42:24Z | - |
dc.date.created | 2020-10-12 | - |
dc.date.issued | 2014-04 | - |
dc.description.abstract | We report the experiments of a plasmonic terahertz (THz) wave detector based on silicon (Si) field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. To investigate the effects of the overdamped charge asymmetry on responsivity (R-V), a FET structure with the asymmetric source and drain area under the gate has been proposed. RV as a function of gate voltage in Si FET-based detectors integrated with an antenna has been successfully enhanced by the asymmetry ratio (eta(a) = W-D/W-S) of gate-overlapped drain width (W-D) to source width (W-S) in agreement with the nonresonant quasi-plasma wave detection theory. The experimentally measured photoresponse has been enhanced by about 36.2 times on average from various samples according to the 10-fold increase in eta(a). The effect of the integrated bow-tie antenna on the performance enhancement has also been estimated as 60-fold at the maximum incident angle for the polarized THz wave source. (C) 2014 The Japan Society of Applied Physics | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.4, pp.04EJ05 | - |
dc.identifier.doi | 10.7567/JJAP.53.04EJ05 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-84903307891 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/48379 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.7567/JJAP.53.04EJ05/meta;jsessionid=52E97BA62A243B81103A6B8BAEE4C846.c4 | - |
dc.identifier.wosid | 000338185100120 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Photoresponse enhancement of plasmonic terahertz wave detector based on asymmetric silicon MOSFETs with antenna integration | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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