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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab (ATOMS)
Research Interests
  • Optoelectronic materials synthesis/organic electronics, functionalization of carbonaceous solids, advanced materials chemistry, macromolecular chemistry

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Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics

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dc.contributor.author Kang, Sung Bum ko
dc.contributor.author Park, Won Jin ko
dc.contributor.author Jeong, Myeong Hoon ko
dc.contributor.author Kang, So-Huei ko
dc.contributor.author Yang, Changduk ko
dc.contributor.author Choi, Kyoung Jin ko
dc.date.available 2020-10-22T08:09:08Z -
dc.date.created 2020-10-07 ko
dc.date.issued 2020-12 ko
dc.identifier.citation ADVANCED FUNCTIONAL MATERIALS, v.30, no.50, pp.2004943 ko
dc.identifier.issn 1616-301X ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/48309 -
dc.description.abstract The suppression of surface recombination is of primary importance for realizing efficient silicon photovoltaics, which is usually achieved by introducing passivation or back-surface field (BSF) layers. In this study, it is demonstrated for the first time that self-assembled, ferroelectric, and organic thin-films can be used as passivating BSF layers for both n- and p-type Si solar cells by switching polarization. The n-Si/PEDOT:PSS heterojunction solar cell with the ambipolar passivated BSF exhibits an efficiency of 18.37%, which is a record-high efficiency for organic semiconductor/n-Si heterojunction solar cells. In addition, homojunction p-Si solar cells with the ambipolar passivated BSF yield superior performance compared to aluminium-BSF cells. Finite-difference time-domain simulations reveal that the electric field due to the ferroelectric layer extends deep into the backside of Si, causing band bending and, consequently, reducing surface recombination. Moreover, the solar cell with passivated BSF maintains > 95% of its initial performance even after 1000 h of the standard damp heat test. This work endows Si-based photovoltaics with the superior passivation and high-performance which were previously exclusive to inorganics. ko
dc.language 영어 ko
dc.publisher WILEY-V C H VERLAG GMBH ko
dc.title Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85090992507 ko
dc.identifier.wosid 000569229400001 ko
dc.type.rims ART ko
dc.identifier.doi 10.1002/adfm.202004943 ko
dc.identifier.url https://onlinelibrary.wiley.com/doi/10.1002/adfm.202004943 ko
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