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RuoffRodney Scott

Ruoff, Rodney S.
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The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

Author(s)
Hao, YufengBharathi, M. S.Wang, LeiLiu, YuanyueChen, HuaNie, ShuWang, XiaohanChou, HarryTan, ChengFallahazad, BabakRamanarayan, H.Magnuson, Carl W.Tutuc, EmanuelYakobson, Boris I.McCarty, Kevin F.Zhang, Yong-WeiKim, PhilipHone, JamesColombo, LuigiRuoff, Rodney S.
Issued Date
2013-11
DOI
10.1126/science.1243879
URI
https://scholarworks.unist.ac.kr/handle/201301/47503
Fulltext
https://science.sciencemag.org/content/342/6159/720
Citation
SCIENCE, v.342, no.6159, pp.720 - 723
Abstract
The growth of high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved control over domain size and morphology, and the results vary from lab to lab under presumably similar growth conditions. We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control of surface O enabled repeatable growth of centimeter-scale single-crystal graphene domains. Oxygen also accelerated graphene domain growth and shifted the growth kinetics from edge-attachment-limited to diffusion-limited. Correspondingly, the compact graphene domain shapes became dendritic. The electrical quality of the graphene films was equivalent to that of mechanically exfoliated graphene, in spite of being grown in the presence of O.
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
ISSN
0036-8075
Keyword
CHEMICAL-VAPOR-DEPOSITIONGRAIN-BOUNDARIESMETAL-SURFACESHIGH-QUALITYACTIVATIONNUCLEATIONFOILSFILMSEDGECU

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