There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 7 | - |
dc.citation.startPage | 073115 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.contributor.author | Ramon, Michael E. | - |
dc.contributor.author | Movva, Hema C. P. | - |
dc.contributor.author | Chowdhury, Sk. Fahad | - |
dc.contributor.author | Parrish, Kristen N. | - |
dc.contributor.author | Rai, Amritesh | - |
dc.contributor.author | Magnuson, Carl W. | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.contributor.author | Akinwande, Deji | - |
dc.contributor.author | Banerjee, Sanjay K. | - |
dc.date.accessioned | 2023-12-22T03:06:23Z | - |
dc.date.available | 2023-12-22T03:06:23Z | - |
dc.date.created | 2020-08-07 | - |
dc.date.issued | 2014-02 | - |
dc.description.abstract | High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R-C) and access resistance (R-A). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f(T)) after doping, as compared to similar to 23% f(T) improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R-C on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R-A for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.7, pp.073115 | - |
dc.identifier.doi | 10.1063/1.4866332 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84897440441 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/47492 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4866332 | - |
dc.identifier.wosid | 000332038500067 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | LIMITS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.