Graphene Field Effect Transistors with Mica as Gate Dielectric Layers

Abstract

Chemical vapor deposited monolayer graphene is transferred onto atomically flat and ultra-thin muscovite mica to study the transport characteristics of graphene with a test structure of mica-based graphene field effect transistor (GFET). The transfer curve of the 24 nm mica-based GFET shows an effective carrier mobility of 2748 cm(2)/Vs and a transconductance of 3.36 S, a factor of 2 and 7 larger than those values obtained from 40 nm SiO2 based GFET, respectively. The results demonstrate that mica is an excellent gate dielectric material due to its high dielectric constant, high dielectric strength, and atomically flat surface.