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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Tokyo | - |
| dc.citation.endPage | 162 | - |
| dc.citation.startPage | 159 | - |
| dc.citation.title | 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Dutton, RW | - |
| dc.date.accessioned | 2023-12-20T05:36:12Z | - |
| dc.date.available | 2023-12-20T05:36:12Z | - |
| dc.date.created | 2014-12-23 | - |
| dc.date.issued | 2005-09-01 | - |
| dc.description.abstract | We propose a numerical band-to-band tunneling model that is suitable for forward-biased silicon tunnel diode simulation. In this model, the tunneling attenuation factor, which depends on the local electric field and effective tunnel mass, determines the tunneling rate and negative differential resistance characteristics of the tunnel diode. Simulation results with the reduced tunnel mass mrx*= 0.10m0considering conductivity electron mass in the conduction band and light-hole mass in the valence band show good agreement with the theoretical calculations for reasonable doping ranges (2.5kBT < qVn,p < 7.5kBT). This local BTBT model is advantageous for fast simulation of tunnel devices using numerical device simulators. | - |
| dc.identifier.bibliographicCitation | 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005, pp.159 - 162 | - |
| dc.identifier.isbn | 978-499027620-1 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/46937 | - |
| dc.language | 영어 | - |
| dc.publisher | 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 | - |
| dc.title | Effects of Local Electric Field and Effective Tunnel Mass on the Simulation of Band-to-Band Tunnel Diode Model | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2005-09-01 | - |
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