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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | CN | - |
| dc.citation.conferencePlace | Toronto | - |
| dc.citation.endPage | 153 | - |
| dc.citation.startPage | 150 | - |
| dc.citation.title | 2014 14th IEEE International Conference on Nanotechnology | - |
| dc.contributor.author | Park, Jong Yul | - |
| dc.contributor.author | Kim, Sung-Ho | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-19T23:38:01Z | - |
| dc.date.available | 2023-12-19T23:38:01Z | - |
| dc.date.created | 2015-01-20 | - |
| dc.date.issued | 2014-08-19 | - |
| dc.description.abstract | In this work, we have shown that plasma-wave transistor (PWT) operates as a terahertz (THz) emitter below maximum gate length (Lmax). Because the channel mobility (p) of strained silicon (sSi) is higher than silicon (Si), we investigate how emission frequency range and Lmax of sSi PWT THz emitter are improved compared to Si PWT THz emitter by analyzing the effect of momentum relaxation time (rp) and electron effective mass (m) on a design window of PWT THz emitter. | - |
| dc.identifier.bibliographicCitation | 2014 14th IEEE International Conference on Nanotechnology, pp.150 - 153 | - |
| dc.identifier.doi | 10.1109/NANO.2014.6968155 | - |
| dc.identifier.isbn | 978-147995622-7 | - |
| dc.identifier.issn | 1944-9399 | - |
| dc.identifier.scopusid | 2-s2.0-84919489741 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/46911 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6968155 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Deca-nanoscale maximum gate length of plasma wave transistor for operating terahertz emitter based on strained silicon platform | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2014-08-18 | - |
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