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dc.citation.conferencePlace US -
dc.citation.conferencePlace San Jose, CA -
dc.citation.endPage 4 -
dc.citation.startPage 1 -
dc.citation.title Custom Integrated Circuits Conference (CICC), 2012 IEEE -
dc.contributor.author Choi, Jaehyouk -
dc.contributor.author Hu, Jianyun -
dc.contributor.author Leung, L -
dc.contributor.author Narathong, C -
dc.contributor.author Park, Jongmin -
dc.contributor.author Sahota, K -
dc.date.accessioned 2023-12-20T01:41:14Z -
dc.date.available 2023-12-20T01:41:14Z -
dc.date.created 2015-07-01 -
dc.date.issued 2012-09-10 -
dc.description.abstract A highly linear oscillator is presented for wideband polar modulation. It has both varactor voltage tuning for frequency locking and temperature compensation as well as inductive current tuning for linear phase modulation. Implemented in 65nm CMOS, it achieved a gain variation less than ±2% over more than 32MHz range meeting WCDMA polar modulation requirement. At 3.8GHz and 3MHz offset, its phase noise is -136.5dBc/Hz with current consumption of 18mA from 2.1V supply. -
dc.identifier.bibliographicCitation Custom Integrated Circuits Conference (CICC), 2012 IEEE, pp.1 - 4 -
dc.identifier.doi 10.1109/CICC.2012.6330598 -
dc.identifier.issn 0886-5930 -
dc.identifier.scopusid 2-s2.0-84869469020 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/46789 -
dc.identifier.url https://ieeexplore.ieee.org/document/6330598 -
dc.language 영어 -
dc.publisher IEEE -
dc.title A 65nm CMOS current controlled oscillator with high tuning linearity for wideband polar modulation -
dc.type Conference Paper -
dc.date.conferenceDate 2012-09-09 -

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