dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Denver, CO |
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dc.citation.endPage |
1014 |
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dc.citation.startPage |
1007 |
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dc.citation.title |
5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 |
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dc.contributor.author |
Kim, Katherine A. |
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dc.contributor.author |
Krein, PT |
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dc.date.accessioned |
2023-12-20T00:38:57Z |
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dc.date.available |
2023-12-20T00:38:57Z |
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dc.date.created |
2015-07-01 |
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dc.date.issued |
2013-09-18 |
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dc.description.abstract |
Hot spots are a common problem in photovoltaic (PV) panels that accelerate cell degradation and reduce system performance. Hot spots occur when a cell is reversed biased, sinks power, and heats the cell. At a certain threshold, the PV p-n junction goes into second breakdown and heats a small portion of the cell to very high temperatures. This study experimentally tests mono-crystalline Si cells as they hot spot at different power levels. Heating effects on the I-V characteristics during hot spotting and permanent changes after seven days of hour-long hot spot tests are observed and analyzed. I-V characteristics are significantly affected under second breakdown, which is observed when cells are reverse-biased above two times the rated maximum power level. |
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dc.identifier.bibliographicCitation |
5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013, pp.1007 - 1014 |
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dc.identifier.doi |
10.1109/ECCE.2013.6646813 |
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dc.identifier.scopusid |
2-s2.0-84891072790 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/46760 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/6646813 |
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dc.language |
영어 |
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dc.publisher |
5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 |
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dc.title |
Hot spotting and second breakdown effects on reverse I-V characteristics for mono-crystalline Si photovoltaics |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2013-09-15 |
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