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김예린

Kim, Katherine A.
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dc.citation.conferencePlace US -
dc.citation.conferencePlace Denver, CO -
dc.citation.endPage 1014 -
dc.citation.startPage 1007 -
dc.citation.title 5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 -
dc.contributor.author Kim, Katherine A. -
dc.contributor.author Krein, PT -
dc.date.accessioned 2023-12-20T00:38:57Z -
dc.date.available 2023-12-20T00:38:57Z -
dc.date.created 2015-07-01 -
dc.date.issued 2013-09-18 -
dc.description.abstract Hot spots are a common problem in photovoltaic (PV) panels that accelerate cell degradation and reduce system performance. Hot spots occur when a cell is reversed biased, sinks power, and heats the cell. At a certain threshold, the PV p-n junction goes into second breakdown and heats a small portion of the cell to very high temperatures. This study experimentally tests mono-crystalline Si cells as they hot spot at different power levels. Heating effects on the I-V characteristics during hot spotting and permanent changes after seven days of hour-long hot spot tests are observed and analyzed. I-V characteristics are significantly affected under second breakdown, which is observed when cells are reverse-biased above two times the rated maximum power level. -
dc.identifier.bibliographicCitation 5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013, pp.1007 - 1014 -
dc.identifier.doi 10.1109/ECCE.2013.6646813 -
dc.identifier.scopusid 2-s2.0-84891072790 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/46760 -
dc.identifier.url https://ieeexplore.ieee.org/document/6646813 -
dc.language 영어 -
dc.publisher 5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 -
dc.title Hot spotting and second breakdown effects on reverse I-V characteristics for mono-crystalline Si photovoltaics -
dc.type Conference Paper -
dc.date.conferenceDate 2013-09-15 -

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