File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김경록

Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.conferencePlace US -
dc.citation.conferencePlace Hilton Hawaiian VillageHonolulu -
dc.citation.title Silicon Nanoelectronics Workshop, SNW 2014 -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Shin, Sunhae -
dc.date.accessioned 2023-12-20T00:06:08Z -
dc.date.available 2023-12-20T00:06:08Z -
dc.date.created 2015-07-01 -
dc.date.issued 2014-06-09 -
dc.description.abstract We propose a novel tri-state latch based on single-peak MOS-NDR. By shifting peak voltage over half of the supply voltage, tri-state memory can be implemented. The fully suppressed valley current of MOS-NDR guarantees the supply voltage design margin in tri-state logic and memory. -
dc.identifier.bibliographicCitation Silicon Nanoelectronics Workshop, SNW 2014 -
dc.identifier.doi 10.1109/SNW.2014.7348610 -
dc.identifier.scopusid 2-s2.0-84963828701 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/46734 -
dc.identifier.url https://ieeexplore.ieee.org/document/7348610 -
dc.language 영어 -
dc.publisher Silicon Nanoelectronics Workshop, SNW 2014 -
dc.title Novel Tri-State Latch using Single-Peak Negative Differential Resistance Devices -
dc.type Conference Paper -
dc.date.conferenceDate 2014-06-08 -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.