dc.citation.conferencePlace |
GE |
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dc.citation.conferencePlace |
International Congress Center DresdenDresden |
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dc.citation.endPage |
1314 |
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dc.citation.startPage |
1310 |
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dc.citation.title |
2015 Joint IEEE International Symposium on Electromagnetic Compatibility and EMC Europe |
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dc.contributor.author |
Park, Eunkyeong |
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dc.contributor.author |
Kim, Jingook |
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dc.contributor.author |
Lee, Jongjoo |
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dc.contributor.author |
Park, Youngwoo |
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dc.date.accessioned |
2023-12-19T22:07:08Z |
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dc.date.available |
2023-12-19T22:07:08Z |
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dc.date.created |
2015-07-01 |
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dc.date.issued |
2015-08-18 |
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dc.description.abstract |
The step response of a single ended output driver with silicon interposer channel is derived including the parasitics of ESD protection circuits. The probability density functions of the output voltage due to supply voltage fluctuations are also analytically calculated. With changing the frequency of supply voltage fluctuations, the effect of ESD parasitics on the output jitter is calculated and compared. |
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dc.identifier.bibliographicCitation |
2015 Joint IEEE International Symposium on Electromagnetic Compatibility and EMC Europe, pp.1310 - 1314 |
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dc.identifier.doi |
10.1109/ISEMC.2015.7256360 |
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dc.identifier.issn |
10774076 |
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dc.identifier.scopusid |
2-s2.0-84953872919 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/46655 |
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dc.identifier.url |
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7256360 |
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dc.language |
영어 |
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dc.publisher |
IEEE International Symposium on Electromagnetic Compatibility and EMC Europe |
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dc.title |
Calculation of Power-Supply-Induced Jitter at a 3-D IC channel including ESD Protection Circuits |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2015-08-16 |
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