dc.citation.conferencePlace |
KO |
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dc.citation.conferencePlace |
평창 |
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dc.citation.title |
한국반도체학술대회 |
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dc.contributor.author |
Lee, Jongwon |
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dc.contributor.author |
Ryu, Seong-Wan |
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dc.contributor.author |
Shin, Dong Ok |
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dc.contributor.author |
Kim, Bong Hoon |
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dc.contributor.author |
Kim, Sang Ouk |
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dc.contributor.author |
Choi, Yang-Kyu |
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dc.date.accessioned |
2023-12-20T04:38:17Z |
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dc.date.available |
2023-12-20T04:38:17Z |
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dc.date.created |
2015-09-16 |
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dc.date.issued |
2008-02-21 |
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dc.description.abstract |
Nonvolatile memory (NVM) characteristics are presented using well-ordered geometric Cr nanocrystal (NC) through the assistance of the block copolymer template. An analytical model for a cone shaped NC was developed and it was well-matched with the measured data. Program efficiency depending on different NC shapes: hemisphere, circular cone, and sphere was comprehensively investigated by the proposed model
Nonvolatile Memory Device with Designed Geometric Nanocrystal and its Analytical Modeling. Available from: http://www.researchgate.net/publication/266471802_Nonvolatile_Memory_Device_with_Designed_Geometric_Nanocrystal_and_its_Analytical_Modeling [accessed Oct 12, 2015]. |
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dc.identifier.bibliographicCitation |
한국반도체학술대회 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/44883 |
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dc.language |
한국어 |
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dc.publisher |
한국반도체산업협회 |
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dc.title |
Nonvolatile Memory Device with Designed Geometric Nanocrystal and its Analytical Modeling |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2008-02-20 |
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