There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 398 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 396 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Lee, Jaewook | - |
dc.contributor.author | Jang, Jaeman | - |
dc.contributor.author | Kim, Hyeongjung | - |
dc.contributor.author | Lee, Jiyoul | - |
dc.contributor.author | Lee, Bang-Lin | - |
dc.contributor.author | Choi, Sung-Jin | - |
dc.contributor.author | Kim, Dong Myong | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T02:47:32Z | - |
dc.date.available | 2023-12-22T02:47:32Z | - |
dc.date.created | 2014-04-03 | - |
dc.date.issued | 2014-03 | - |
dc.description.abstract | The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V-T)-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V-T-shift while V-T-shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (RSD) is the main reason for NBS-induced ON-current (ION) degradation. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.396 - 398 | - |
dc.identifier.doi | 10.1109/LED.2014.2298861 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-84895918700 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4213 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84895918700 | - |
dc.identifier.wosid | 000332029200035 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.