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DC Field | Value | Language |
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dc.citation.endPage | 2825 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 2817 | - |
dc.citation.title | SMALL | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Lee, Joong Suk | - |
dc.contributor.author | Kim, Nam Hee | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Yu, Hojeong | - |
dc.contributor.author | Lee, Dong Ryoul | - |
dc.contributor.author | Oh, Joon Hak | - |
dc.contributor.author | Chang, Suk Tai | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.accessioned | 2023-12-22T03:40:00Z | - |
dc.date.available | 2023-12-22T03:40:00Z | - |
dc.date.created | 2013-09-09 | - |
dc.date.issued | 2013-08 | - |
dc.description.abstract | A wafer-scale patterning method for solution-processed graphene electrodes, named the transfer-and-reverse stamping method, is universally applicable for fabricating source/drain electrodes of n- and p-type organic field-effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre-prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as-prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen-plasma-treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n- and p-type organic field-effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode-patterning-technique leads to assembling organic complementary circuits onto a flexible substrate successfully. Reproducible and effective wafer-scale patterning of reduced graphene oxide (rGO) electrodes by transfer-and-reverse stamping method is reported. The highly defined rGO micropatterns with various shapes are readily formed on rigid or flexible hydrophobized substrates and serve as the electrodes for high-performance n- and p-type OFETs and complementary inverters. | - |
dc.identifier.bibliographicCitation | SMALL, v.9, no.16, pp.2817 - 2825 | - |
dc.identifier.doi | 10.1002/smll.201300538 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.scopusid | 2-s2.0-84882412913 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4135 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84882412913 | - |
dc.identifier.wosid | 000327738600022 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Wafer-scale patterning of reduced graphene oxide electrodes by transfer-and-reverse stamping for high performance OFETs | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | flexible inverters | - |
dc.subject.keywordAuthor | micropatterning | - |
dc.subject.keywordAuthor | reduced graphene oxide | - |
dc.subject.keywordAuthor | source-drain electrodes | - |
dc.subject.keywordAuthor | thin films | - |
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