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노삼혁

Noh, Sam H.
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DC Field Value Language
dc.citation.conferencePlace KO -
dc.citation.title ISOCC 2004 Conference -
dc.contributor.author Bae, Young Hyun -
dc.contributor.author Lee, Donghee -
dc.contributor.author Noh, Sam H. -
dc.contributor.author Min, Sang Lyul -
dc.date.accessioned 2023-12-20T05:38:47Z -
dc.date.available 2023-12-20T05:38:47Z -
dc.date.created 2016-10-06 -
dc.date.issued 2004-10 -
dc.description.abstract Flash memory has a restriction that a block should be erased prior to data write. Moreover, there is a limit on the erase count of each block. If data writes are concentrated on some blocks, the blocks are worn out earlier than other blocks and then the lifetime of a flash
memory is shortened. Therefore, flash memory file system should provide an efficient wear-leveling scheme that improves robustness of the storage by making all blocks used in an even frequency. Previous wear-leveling schemes require large computation overheads and erase count maintenance costs. In this paper, we propose an efficient wear-leveling scheme for a flash memory file system that is simple and effectively levels erase counts regardless of the file access pattern. The wear-leveling capability is evaluated through experiment and compared with the existing flash memory file system.
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dc.identifier.bibliographicCitation ISOCC 2004 Conference -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/41103 -
dc.identifier.url http://www.dbpia.co.kr/Journal/ArticleDetail/NODE01810817 -
dc.language 영어 -
dc.publisher 대한전자공학회 -
dc.title Efficient Wear-leveling Scheme for Flash Memory File System -
dc.type Conference Paper -

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