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DC Field | Value | Language |
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dc.citation.endPage | 2401 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2398 | - |
dc.citation.title | ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | - |
dc.citation.volume | 53 | - |
dc.contributor.author | Jung, Sun-Min | - |
dc.contributor.author | Lee, Eun Kwang | - |
dc.contributor.author | Choi, Min | - |
dc.contributor.author | Shin, Dongbin | - |
dc.contributor.author | Jeon, In-Yup | - |
dc.contributor.author | Seo, Jeong-Min | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Park, Noejung | - |
dc.contributor.author | Oh, Joon Hak | - |
dc.contributor.author | Baek, Jong-Beom | - |
dc.date.accessioned | 2023-12-22T03:07:01Z | - |
dc.date.available | 2023-12-22T03:07:01Z | - |
dc.date.created | 2014-03-06 | - |
dc.date.issued | 2014-02 | - |
dc.description.abstract | Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications. Mixing it up a bit: B/N-doped graphene was directly synthesized from the reaction of CCl4, BBr3, and N2 in the presence of potassium. It has good dispersibility in N-methyl-2-pyrrolidone, allowing solution casting for the fabrication of field-effect transistors with an on/off ratio of 10.7 and an optical band gap of 3.3 eV. The method is scalable and solution processable, making it suitable for many applications. | - |
dc.identifier.bibliographicCitation | ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.53, no.9, pp.2398 - 2401 | - |
dc.identifier.doi | 10.1002/anie.201310260 | - |
dc.identifier.issn | 1433-7851 | - |
dc.identifier.scopusid | 2-s2.0-84894445763 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4091 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84894445763 | - |
dc.identifier.wosid | 000331512200010 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Direct Solvothermal Synthesis of B/N-Doped Graphene | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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