dc.citation.conferencePlace |
US |
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dc.citation.title |
229th ECS MEETING |
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dc.contributor.author |
Shin, Hyeon Suk |
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dc.date.accessioned |
2023-12-19T20:38:11Z |
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dc.date.available |
2023-12-19T20:38:11Z |
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dc.date.created |
2016-12-26 |
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dc.date.issued |
2016-06-01 |
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dc.description.abstract |
Hexagonal boron nitride (h-BN) is an attractive two-dimensional (2D) dielectric material and thus its heterostructures with graphene are gaining a great deal of attention for potential applications in 2D materials. In this talk, I first present the growth of single-layer and multilayer h-BN in large area by a low-pressure chemical vapor deposition (LPCVD) method. Both of single-layer and multilayer h-BN are characterized to be highly crystalline by high-resolution transmission electron microscopy. Next, I demonstrate a new chemical route for heterostructures of h-BN and graphene on Pt foil by LPCVD, in which the Pt substrate plays a catalytic role. I propose that this reaction proceeds through h-BN hydrogenation on Pt step edges; subsequent graphene growth quickly replaces the initially etched region. Importantly, this conversion reaction enables the controlled formation of patterned in-plane graphene/h-BN heterostructures, without needing the commonly employed protecting mask, simply by using a patterned Pt substrate. |
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dc.identifier.bibliographicCitation |
229th ECS MEETING |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/40807 |
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dc.identifier.url |
https://ecs.confex.com/ecs/229/webprogram/Paper69788.html |
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dc.language |
영어 |
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dc.publisher |
The Electrochemical Society |
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dc.title |
Growth of Hexagonal Boron Nitride and Its in-Plane Heterostructures with Graphene |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2016-05-29 |
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