dc.citation.conferencePlace |
SP |
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dc.citation.title |
Graphene2017: 7th edition of the largest European Conference & Exhibition in Graphene and 2D Materials |
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dc.contributor.author |
Shin, Hyeon Suk |
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dc.date.accessioned |
2023-12-19T19:11:24Z |
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dc.date.available |
2023-12-19T19:11:24Z |
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dc.date.created |
2018-01-15 |
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dc.date.issued |
2017-03-29 |
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dc.description.abstract |
Large-scale growth of high-quality hexagonal boron nitride (h-BN) has been a challenge in two-dimensional (2D)-materialbased electronics. In this presentation, I demonstrate wafer-scale and wrinkle-free epitaxial growth of multi-layer h-BN on a sapphire substrate by using hightemperature and low-pressure chemical vapor deposition.[1] Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized h-BN has a single rotational orientation with Bernal stacking order. A facile method for transferring h-BN onto other target substrates were developed, which provides the opportunity for using h-BN as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our h-BN sheets shows highly improved carrier mobility, because the ultra-flatness of the hBN surface can reduce the substrateinduced degradation of the carrier mobility of 2D materials. Afterwards, I show some potential applications of h-BN for a shell layer capping Au nanoparticles in surfaceenhance Raman scattering [2], an encapsulation (or passivation) layer to protect unstable transition metal dichalcogenides (TMDs) [3], and a proton exchange membrane to replace the Nafion film in a polymer electrolyte membrane (PEM) fuel cell. |
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dc.identifier.bibliographicCitation |
Graphene2017: 7th edition of the largest European Conference & Exhibition in Graphene and 2D Materials |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/38796 |
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dc.language |
영어 |
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dc.publisher |
Graphene2017 |
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dc.title |
Potential Applications of Hexagonal Boron Nitride |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2017-03-28 |
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