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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Enhanced photoresponse of plasmonic terahertz wave detector based on silicon field effect transistors with asymmetric source and drain structures

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dc.contributor.author Ryu, Min Woo ko
dc.contributor.author Kim, Sung-Ho ko
dc.contributor.author Kim, Kyung Rok ko
dc.date.available 2014-04-10T02:26:35Z -
dc.date.created 2014-01-06 ko
dc.date.issued 2013-12 -
dc.identifier.citation JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.576 - 580 ko
dc.identifier.issn 1598-1657 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3873 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84890863132 ko
dc.description.abstract We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IEEK PUBLICATION CENTER ko
dc.subject Asymmetry ko
dc.subject Photoresponse ko
dc.subject Quasi-plasma 2DEG ko
dc.subject TCAD simulation ko
dc.subject Terahertz wave detector ko
dc.title Enhanced photoresponse of plasmonic terahertz wave detector based on silicon field effect transistors with asymmetric source and drain structures ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84890863132 ko
dc.identifier.wosid 000328936000007 ko
dc.type.rims ART ko
dc.description.wostc 0 *
dc.description.scopustc 0 *
dc.date.tcdate 2014-10-18 *
dc.date.scptcdate 2014-07-12 *
dc.identifier.doi 10.5573/JSTS.2013.13.6.576 ko
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