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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Austin, TX | - |
| dc.citation.title | IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2012 | - |
| dc.contributor.author | Kim, Youngmin | - |
| dc.contributor.author | Nguyen, HV | - |
| dc.date.accessioned | 2023-12-20T02:07:04Z | - |
| dc.date.available | 2023-12-20T02:07:04Z | - |
| dc.date.created | 2013-05-29 | - |
| dc.date.issued | 2012-05-30 | - |
| dc.description.abstract | FinFET devices with superior ability in controlling leakage and minimizing short channel effects are anticipated to replace CMOS devices in the near future. This paper presents a design of voltage sensor in 32 nm FinFET. Based on the operation of a p-type FinFET in low-power mode and independent-gate mode, a new technique for designing a controllable delay element (CDE) with high linearity is presented. Then, we develop a 9-bit digital voltage sensor with a voltage range of 0.7 - 1.1 V and 50 mV resolution. The proposed voltage sensor can operate with ultra-low power, a wide voltage range, and fairly high frequency (i.e., 100 MHz). | - |
| dc.identifier.bibliographicCitation | IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2012 | - |
| dc.identifier.doi | 10.1109/ICICDT.2012.6232846 | - |
| dc.identifier.isbn | 978-146730146-6 | - |
| dc.identifier.scopusid | 2-s2.0-84864666144 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/37556 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6232846 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2012 | - |
| dc.title | 32 nm FinFET-based 0.7-to-1.1 V digital voltage sensor with 50 mV resolution | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2012-05-30 | - |
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